Example 2: 248 nm Photoresist on Silicon Substrate .28PR.2FSi-Sub.29 Refractive index and extinction coefficient of thin film materials

polymers such photoresist consist of long chains of molecules not form crystallographic structure in classic sense. however, n(λ) , k(λ) spectra exhibit several sharp peaks rather broad maximum expected non-crystalline materials. thus, measurement results polymer based on forouhi-bloomer formulation crystalline materials. of structure in n(λ) , k(λ) spectra occurs in deep uv wavelength range , characterize film of nature, necessary measured reflectance data in deep uv range accurate.

the figure shows measurement example of photoresist (polymer) material used 248 nm micro-lithography. 6 terms used in forouhi-bloomer equations crystalline materials fit data , achieve results.